| US 7,601,618 B2 | ||
| Method for producing semi-conditioning material wafers by moulding and directional crystallization | ||
| Beatrice Drevet, Grenoble (France); Dominique Sarti, Chambery (France); Denis Camel, Chambery (France); and Jean-Paul Garandet, Grenoble (France) | ||
| Assigned to Commissariat a l'Energie Atomique, Paris (France) | ||
| Filed on Jun. 24, 2008, as Appl. No. 12/213,751. | ||
| Claims priority of application No. 07 04690 (FR), filed on Jun. 29, 2007. | ||
| Prior Publication US 2009/0004835 A1, Jan. 01, 2009 | ||
| Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—486 [257/E21.133] | 13 Claims |
| 1. A method for producing semi-conducting material wafers by moulding and directional crystallization of a liquid mass of
this material by means of a device comprising a crucible and a mould formed by a plurality of intercalary elements spaced
apart from one another, method comprising
disposing a seed at the bottom of the crucible,
inserting a semi-conducting material feedstock into the crucible,
melting the feedstock, the seed presenting a face having an orientation along non-dense crystallographic planes in contact
with the melt,
directional solidifying the feedstock in the mould, and
separating the seed and the solidified semi-conducting material.
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