| US 7,601,616 B2 | ||
| Wafer laser processing method | ||
| Hiroshi Morikazu, Tokyo (Japan); Ryugo Oba, Tokyo (Japan); Yukio Morishige, Tokyo (Japan); Toshio Tsuchiya, Tokyo (Japan); and Koji Yamaguchi, Tokyo (Japan) | ||
| Assigned to Disco Corporation, Tokyo (Japan) | ||
| Filed on Jul. 19, 2007, as Appl. No. 11/826,911. | ||
| Claims priority of application No. 2006-198441 (JP), filed on Jul. 20, 2006. | ||
| Prior Publication US 2008/0020548 A1, Jan. 24, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—463 [438/460; 438/462; 438/795; 257/E21.596; 257/E21.602] | 2 Claims |
| 1. A wafer laser processing method for forming grooves along streets of a wafer for sectioning a plurality of devices of the
wafer, the plurality of devices being composed of a laminate consisting of an insulating film and a functional film on a front
surface of the wafer, said method comprising
setting a pulse laser beam to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m,
and
applying the pulse laser beam to the wafer to obtain a processed portion of the wafer with a temperature that does not fall
below a softening temperature of the laminate.
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