| US 7,601,601 B2 | ||
| Method for manufacturing semiconductor device | ||
| Shunpei Yamazaki, Setagaya (Japan); and Hideto Ohnuma, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Mar. 28, 2008, as Appl. No. 12/78,214. | ||
| Claims priority of application No. 2007-127270 (JP), filed on May 11, 2007. | ||
| Prior Publication US 2008/0280417 A1, Nov. 13, 2008 | ||
| Int. Cl. H01L 21/331 (2006.01); H01L 21/8222 (2006.01) | ||
| U.S. Cl. 438—311 [438/475; 438/197; 438/680; 257/E21.17; 257/E21.218; 257/E21.229; 257/E21.227; 257/E21.278] | 34 Claims |
| 1. A method for manufacturing a semiconductor device, comprising:
forming a groove in a part of a semiconductor substrate;
irradiating one surface of the semiconductor substrate with ions of a single atom or a plurality of atoms that has different
mass to form a brittle region having a porous structure in a region at a depth close to an average penetration depth of the
ion from the one surface of the semiconductor substrate;
forming a silicon oxide layer over the one surface of the semiconductor substrate;
performing a heat treatment, after superposing the one surface of the semiconductor substrate and a substrate having an insulating
surface on each other with the silicon oxide layer being interposed between the one surface of the semiconductor substrate
and the substrate having an insulating surface and after bonding the silicon oxide layer and the substrate having an insulating
surface together, to generate a crack in the brittle region, to separate the semiconductor substrate at the brittle region,
and to form a semiconductor layer over the substrate having an insulating surface; and
forming a semiconductor element using the semiconductor layer.
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