| US 7,601,482 B2 | ||
| Negative photoresist compositions | ||
| Georg Pawlowski, Bridgewater, N.J. (US); Chunwei Chen, Piscataway, N.J. (US); Joseph Oberlander, Phillipsburg, N.J. (US); and Robert Plass, Belleville, N.J. (US) | ||
| Assigned to AZ Electronic Materials USA Corp., Somerville, N.J. (US) | ||
| Filed on Mar. 28, 2006, as Appl. No. 11/390,716. | ||
| Prior Publication US 2007/0231735 A1, Oct. 04, 2007 | ||
| Int. Cl. G03F 7/033 (2006.01); G03F 7/028 (2006.01); G03F 7/031 (2006.01); G03F 7/30 (2006.01) | ||
| U.S. Cl. 430—285.1 [430/325; 430/905; 430/910; 430/916; 430/914] | 23 Claims |
| 1. A negative photoresist composition comprising;
a) at least one alkali-soluble polymer, where the polymer comprises at least one unit of structure 1,
![]() where, R′ is selected independently from hydrogen, (C1-C4)alkyl, chlorine and bromine, and m is an integer from 1 to 4;
b) at least one monomer of structure 4;
![]() where, W is a multivalent linking group, R1 to R6 are independently selected from hydrogen, hydroxy, (C1-C20) alkyl and chlorine, X1 and X2 are independently oxygen and n is an integer equal to or greater than 1; and,
c) at least one photoinitiator,
and, further where the monomer of structure 4 comprises an acid-cleavable group and the alkali-soluble polymer further comprises
an acid-cleavable group.
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