| US 7,601,217 B2 | ||
| Method of fabricating an epitaxially grown layer | ||
| Bruce Faure, Grenoble (France); and Fabrice Letertre, Grenoble (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Nov. 22, 2005, as Appl. No. 11/283,706. | ||
| Application 11/283706 is a continuation in part of application No. PCT/EP2004/007578, filed on Jul. 07, 2004. | ||
| Claims priority of application No. 03 09079 (FR), filed on Jul. 24, 2003. | ||
| Prior Publication US 2006/0076559 A1, Apr. 13, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C30B 23/00 (2006.01); C30B 28/12 (2006.01); H01L 21/30 (2006.01) | ||
| U.S. Cl. 117—92 [117/95; 117/89; 117/54; 117/103; 117/104; 438/459; 438/528; 438/928; 438/977; 438/503; 438/497] | 20 Claims |
| 1. A method of forming an epitaxially grown layer, comprising:
providing a region of weakness within a support substrate that includes a support portion and a remainder portion, such that
the region of weakness defines the support portion and the remainder portion on opposite sides thereof;
transferring a nucleation portion onto the support portion by bonding, wherein the nucleation portion is selected and configured
for improving conditions for growing an epitaxial layer compared to the support substrate;
epitaxially growing an epitaxial layer on the transferred nucleation portion; and
removing the remainder portion from the support portion by detaching at the region of weakness;
wherein the epitaxial layer is grown by homoepitaxy covering an area with at least a 20 mm diameter.
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