| US 7,432,529 B2 | ||
| Light emitting apparatus and method for manufacturing the same | ||
| Shunpei Yamazaki, Tokyo (Japan); Satoshi Murakami, Kanagawa (Japan); Masayuki Sakakura, Kanagawa (Japan); and Toru Takayama, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Jun. 02, 2005, as Appl. No. 11/142,275. | ||
| Application 11/142275 is a division of application No. 10/290478, filed on Nov. 08, 2002, granted, now 6,903,377. | ||
| Claims priority of application No. 2001-345354 (JP), filed on Nov. 09, 2001; and application No. 2001-143800 (JP), filed on May 17, 2002. | ||
| Prior Publication US 2005/0224820 A1, Oct. 13, 2005 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—72 [257/88] | 31 Claims |
| 1. A light emitting device comprising:
a transistor over an insulating surface comprising:
a semiconductor layer comprising a channel forming region, a source region and a drain region;
a gate insulation film; and
a gate electrode;
a first insulating layer over the transistor;
a second insulating layer over the first insulating layer;
a third insulating layer over the second insulating layer;
a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;
a light-emitting layer over the cathode;
an anode over the third insulating layer and the light-emitting layer;
a seal pattern over the second insulating layer; and
a sealing plate over the anode and the seal pattern,
wherein the seal pattern is separated from the anode, and
wherein the seal pattern does not overlap the light-emitting layer.
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