| US 7,432,216 B2 | ||
| Semiconductor device and manufacturing method thereof | ||
| Yasuhiro Shimamoto, Leuven (Belgium); Shinichi Saito, Kawasaki (Japan); and Shimpei Tsujikawa, Tokyo (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Filed on Aug. 15, 2006, as Appl. No. 11/503,935. | ||
| Application 11/503935 is a continuation of application No. 10/788278, filed on Mar. 01, 2004, granted, now 7,112,833. | ||
| Claims priority of application No. P2003-079375 (JP), filed on Mar. 24, 2003. | ||
| Prior Publication US 2006/0273357 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01) | ||
| U.S. Cl. 438—769 [438/216; 438/261; 257/411; 257/639; 257/649; 257/E21.2; 257/E21.267] | 11 Claims |
| 1. A manufacturing method of a semiconductor device, in which a field effect transistor, including a gate insulator formed
on a substrate, the gate insulator being formed of a silicon oxynitride film with an equivalent SiO2 thickness of 2.5 nm or less and a gate electrode formed on said gate insulator is formed, the method comprising the steps
of:
forming, on said substrate, a silicon nitride film with a physical thickness of 0.9 nm; and
forming said silicon oxynitride film by performing a thermal treatment of said silicon nitride film in a NO or N2O atmosphere,
wherein the physical thickness of said silicon oxynitride film is increased 1.9 times or more of said silicon nitride film,
wherein the thermal treatment in said NO or N2O atmosphere comprises the steps of:
forming a first silicon oxynitride film by replacing nitrogen in said silicon nitride film by oxygen; and
forming a second silicon oxynitride film by oxynitriding said substrate,
wherein said silicon oxynitride film composed of said first and second silicon oxynitride film is formed.
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