| US 7,432,176 B2 | ||
| Method of three-dimensional microfabrication and high-density three-dimentional fine structure | ||
| Tadaaki Kaneko, Hyogo (Japan); Naokatsu Sano, Hyogo (Japan); and Kiyoshi Sakaue, Hyogo (Japan) | ||
| Assigned to Riber, Bezons (France) | ||
| Appl. No. 11/578,034 PCT Filed Apr. 13, 2004, PCT No. PCT/JP2004/005262 § 371(c)(1), (2), (4) Date Dec. 07, 2006, PCT Pub. No. WO2005/101470, PCT Pub. Date Oct. 27, 2005. |
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| Prior Publication US 2007/0232029 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—487 [257/E21.134] | 14 Claims |
| 1. A three-dimensional very fine patterning method comprising the steps of:
preparing a substrate of a Group III-V compound semiconductor including AlxGayIn1-x-yAszP1-z (0≤x<1, 0≤y, z≤1);
throwing on the substrate surface an electron beam whose current density is controlled in respect of the diameter of the beam,
thereby selectively substituting a Group III oxide for the natural oxide formed on the substrate surface or selectively forming
a Group III oxide;
raising the temperature of the substrate to a predetermined temperature to allow the parts other than those substituted for
or formed to detach from the substrate surface; and
allowing the selective crystal growth of a Group III-V compound semiconductor on the natural oxide stripping side, particularly
on the part substituted for by the Group III oxide or the region other than the part substituted for by the Group III oxide
according to the molecular beam epitaxy method using a solid growth material.
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