| US 7,432,150 B2 | ||
| Method of manufacturing a magnetoelectronic device | ||
| Mark A. Durlam, Chandler, Ariz. (US); Gloria J. Kerszykowski, Fountain Hills, Ariz. (US); Nicholas D. Rizzo, Gilbert, Ariz. (US); Eric J. Salter, Scottsdale, Ariz. (US); and Loren J. Wise, Tempe, Ariz. (US) | ||
| Assigned to EverSpin Technologies, Inc., Chandler, Ariz. (US) | ||
| Filed on Feb. 10, 2006, as Appl. No. 11/351,610. | ||
| Prior Publication US 2007/0190669 A1, Aug. 16, 2007 | ||
| Int. Cl. H01L 21/8234 (2006.01); H01L 21/8244 (2006.01) | ||
| U.S. Cl. 438—238 [438/3; 438/197; 257/E21.4; 257/E21.248; 257/E21.436; 257/E21.546; 257/E21.645] | 20 Claims |
| 1. A method of manufacturing a magnetoelectronic device, the method comprising:
providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the
electrically conducting material; and
implanting a magnetic material into the electrically insulating material, wherein:
the magnetic material increases a magnetic permeability of the electrically insulating material; and
implanting the magnetic material in a concentration of between approximately 5 percent and approximately 30 percent by atomic
weight of the electrically insulating material.
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