| 1. An apparatus comprising:
at least one memory element coupled to a modify node, a first node, and a read node, the read node to receive a voltage having
a predetermined voltage level and to selectively provide information stored in the at least one memory element, the first
node having a first capacitance and a first capacitance voltage level; and
an adaptive voltage generator coupled to the modify node to selectively modify information in the at least one memory element
coupled to the modify node, wherein the adaptive voltage generator is configured to maintain the first node and the modify
node at the predetermined voltage level when switching between a modify operation and a read operation in the at least one
memory element.
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