| US 7,599,227 B2 | ||
| Reduced power programming of non-volatile cells | ||
| Eduardo Maayan, Kfar Saba (Israel) | ||
| Assigned to Saifun Semiconductors Ltd., Netanya (Israel) | ||
| Filed on Apr. 14, 2008, as Appl. No. 12/81,282. | ||
| Application 12/081282 is a continuation of application No. 10/864500, filed on Jun. 10, 2004, granted, now 7,366,025. | ||
| Prior Publication US 2008/0198670 A1, Aug. 21, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.28 [365/185.13] | 22 Claims |
| 1. A method of programming a non-volatile memory cell comprising: applying only a substantially transient current to a source or drain terminal of the cell; wherein applying only a substantially transient current comprises providing a programming voltage to a source or drain of said cell; and after said source or drain voltage is applied, disconnecting a second terminal of the non-volatile memory cell from a ground voltage. |