| US 7,599,217 B2 | ||
| Memory cell device and manufacturing method | ||
| Erh-Kun Lai, Longjing Shiang (Taiwan); Chiahua Ho, Kaoshing (Taiwan); and Kuang Yeu Hsieh, Hsinchu County (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Feb. 17, 2006, as Appl. No. 11/357,902. | ||
| Claims priority of provisional application 60/738924, filed on Nov. 22, 2005. | ||
| Prior Publication US 2007/0117315 A1, May 24, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—163 [365/63; 365/148] | 10 Claims |
| 1. A memory cell device of the type including a memory material switchable between electrical property states by the application
of energy, the memory cell device comprising:
a first electrode having an electrode surface;
a first material over the electrode surface to create a separation layer having an upper surface;
the first material defining a hole bounded by a side wall within the separation layer, a bottom and a plane defined by the
upper surface;
a second material on the side wall;
a third material on the upper surface of the separation layer;
the third material defining a first downwardly and inwardly tapering void region above the plane of the upper surface;
the second material having a tapering cross-sectional shape and defining a void, the void having a second downwardly and inwardly
tapering void region below the plane of the upper surface;
a memory material in at least a portion of the second void region and in electrical contact with the electrode surface; and
a second electrode in electrical contact with the memory material;
whereby energy passing between the first and second electrodes is concentrated within the memory material so to facilitate
changing an electrical property state of the memory material.
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