| US 7,598,528 B2 | ||
| High power light emitting diode package and method of producing the same | ||
| Kyung Seob Oh, Incheon (Korea, Republic of); Jae Ky Roh, Gyunggi-do (Korea, Republic of); Jung Kyu Park, Seoul (Korea, Republic of); Jong Hwan Baek, Seoul (Korea, Republic of); and Seung Hwan Choi, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do (Korea, Republic of) | ||
| Filed on Jun. 13, 2007, as Appl. No. 11/808,810. | ||
| Claims priority of application No. 10-2006-0064439 (KR), filed on Jul. 10, 2006. | ||
| Prior Publication US 2008/0042151 A1, Feb. 21, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01); H01L 29/22 (2006.01); H01L 29/24 (2006.01) | ||
| U.S. Cl. 257—88 [257/98; 257/99; 257/100; 257/E33.056; 257/E33.057; 257/E33.058; 257/E33.059; 257/E33.068; 257/E33.07; 257/E33.072] | 7 Claims |
| 1. A high power light emitting diode package comprising:
a plurality of light emitting diode chips;
a first lead frame with the plurality of light emitting diode chips mounted thereon and a second lead frame disposed apart
at a predetermined interval from the first lead frame;
a package body fixing the first and second lead frames; and
bonding wires for electrically connecting the plurality of light emitting diode chips,
wherein the package body comprises at least one first reflecting part separately surrounding each of the plurality of light
emitting diode chips with upward-inclined inner side walls thereof, and a second reflecting part surrounding the entire plurality
of light emitting diode chips with an upward-inclined inner side wall thereof.
|