| US 7,598,177 B2 | ||
| Methods of filling trenches using high-density plasma deposition (HDP) | ||
| Yong-Won Cha, Gyeonggi-do (Korea, Republic of); and Kyu-tae Na, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Apr. 11, 2006, as Appl. No. 11/402,166. | ||
| Application 11/402166 is a continuation of application No. 10/917659, filed on Aug. 13, 2004, granted, now 7,056,827. | ||
| Claims priority of application No. 2003-56637 (KR), filed on Aug. 14, 2003. | ||
| Prior Publication US 2006/0183320 A1, Aug. 17, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—706 [438/424; 438/689; 438/701; 438/711; 438/723; 438/783] | 22 Claims |
| 1. A method of forming an integrated circuit device, the method comprising:
forming a plurality of patterns on an integrated circuit substrate, the plurality of patterns defining at least one gap on
the integrated circuit substrate;
forming a first high-density plasma layer on the integrated circuit substrate including the at least one gap using a first
reaction gas;
etching the first high-density plasma layer using an etch gas including nitrogen fluoride (NF3); and
forming a second high-density plasma layer on the etched first high-density plasma layer using a second reaction gas including
nitrogen fluoride (NF3), wherein the second reaction gas is free of an inert gas.
|