| US 7,598,102 B1 | ||
| Method for fabricating pixel structure | ||
| Chou-Huan Yu, Taichung County (Taiwan); Chun-Yi Chiang, Taichung (Taiwan); Chia-Chi Tsai, Taipei (Taiwan); Chen-Pang Tung, Taipei (Taiwan); Hsiang-Chih Hsiao, Keelung (Taiwan); Chia-Ming Chang, Taipei County (Taiwan); Zong-Long Jhang, Taichung (Taiwan); Che-Yung Lai, Taichung County (Taiwan); Han-Tang Chou, Taoyuan (Taiwan); Jun-Kai Chang, Chiayi (Taiwan); and Ta-Wen Liao, Hsinchu County (Taiwan) | ||
| Assigned to Au Optronics Corporation, Hsinchu (Taiwan) | ||
| Filed on Jul. 31, 2008, as Appl. No. 12/183,071. | ||
| Claims priority of application No. 97120446 A (TW), filed on Jun. 02, 2008. | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—29 [438/30; 438/38; 257/59; 257/E21.09] | 14 Claims |

| 1. A method for fabricating a pixel structure, the method comprising:
forming a gate on a substrate;
forming a gate insulator layer on the substrate to cover the gate;
forming a semiconductor layer, a conductive layer and a photosensitive black matrix sequentially on the gate insulator layer,
wherein the photosensitive black matrix has a color filter containing opening and includes a first portion and a second portion,
and wherein a thickness of the first portion is smaller than a thickness of the second portion;
forming a channel, a source and a drain simultaneously on the gate insulator layer over the gate using the photosensitive
black matrix as a mask, wherein the gate, the channel, the source and the drain constitute a thin film transistor (TFT);
forming a passivation on the photosensitive black matrix, the TFT and the gate insulator layer;
forming a color filter layer in the color filter containing opening by an inkjet printing process;
forming a dielectric layer on the black matrix and the color filter layer;
patterning the dielectric layer and the passivation to expose the drain; and
forming a pixel electrode electrically connected to the drain.
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