| US 7,598,014 B2 | ||
| Thick film photoresist composition and method of forming resist pattern | ||
| Yasushi Washio, Kawasaki (Japan); and Koji Saito, Kawasaki (Japan) | ||
| Assigned to Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi (Japan) | ||
| Appl. No. 10/578,398 PCT Filed Nov. 18, 2004, PCT No. PCT/JP2004/017534 § 371(c)(1), (2), (4) Date May 04, 2006, PCT Pub. No. WO2005/054951, PCT Pub. Date Jun. 16, 2005. |
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| Claims priority of application No. 2003-401563 (JP), filed on Dec. 01, 2003; and application No. 2004-265693 (JP), filed on Sep. 13, 2004. | ||
| Prior Publication US 2007/0105037 A1, May 10, 2007 | ||
| Int. Cl. G03F 7/00 (2006.01); G03F 7/004 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/281.1; 430/286.1; 430/287.1; 430/905; 430/913] | 5 Claims |
| 1. A thick film photoresist composition comprising:
(A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from dicyclopentanyl (meth)acrylate
ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group,
(B) a polymerizable compound containing at least one ethylenic unsaturated double bond,
(C) a photopolymerization initiator, and
(D) an organic solvent.
|