| US 7,598,004 B2 | ||
| Film-depositing target and preparation of phase shift mask blank | ||
| Hiroki Yoshikawa, Joetsu (Japan); Toshinobu Ishihara, Joetsu (Japan); Satoshi Okazaki, Joetsu (Japan); Yukio Inazuki, Joetsu (Japan); Tadashi Saga, Tokyo (Japan); Kimihiro Okada, Tokyo (Japan); Masahide Iwakata, Tokyo (Japan); Takashi Haraguchi, Tokyo (Japan); and Yuichi Fukushima, Tokyo (Japan) | ||
| Assigned to Shin-Etsu Chemical Co., Ltd., Tokyo (Japan); and Toppan Printing Co., Ltd., Tokyo (Japan) | ||
| Filed on Mar. 30, 2005, as Appl. No. 11/93,297. | ||
| Claims priority of application No. 2004-102288 (JP), filed on Mar. 31, 2004. | ||
| Prior Publication US 2005/0217988 A1, Oct. 06, 2005 | ||
| Int. Cl. G03F 1/00 (2006.01); C25B 11/00 (2006.01) | ||
| U.S. Cl. 430—5 [204/298.13] | 5 Claims |
| 1. A method for the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent
film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising
silicon, molybdenum and zirconium at the same time as constituent elements, said method comprising the steps of:
disposing a target comprising at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5, and
a silicon-base target in a common chamber, and
inducing electric discharges to both the targets at the same time for sputtering, for thereby depositing the at least one
layer of the translucent film having a molar ratio Zr/Mo of 0.05 to 5.
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