| US 7,597,816 B2 | ||
| Wafer bevel polymer removal | ||
| Jeremy Chang, Sunnyvale, Calif. (US); Andreas Fischer, Castro Valley, Calif. (US); and Peter Loewenhardt, Pleasanton, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Sep. 03, 2004, as Appl. No. 10/934,081. | ||
| Prior Publication US 2006/0051967 A1, Mar. 09, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 216—67 [216/49; 216/79; 438/710; 438/725; 438/906; 134/1.2; 134/902] | 20 Claims |
| 1. A method for forming a semiconductor device, comprising:
placing a wafer with a dielectric layer disposed under a photoresist mask in an etch chamber;
etching the dielectric layer, thereby forming polymer on the bevel of the wafer;
providing a stripping gas;
forming a plasma from the stripping gas;
stripping the photoresist mask using the plasma from the stripping gas;
quenching the plasma from the stripping gas;
raising the wafer;
providing a cleaning gas after quenching the plasma and raising the wafer;
forming a plasma from the cleaning gas;
removing the polymer that has formed on the bevel of the wafer using the plasma from the cleaning gas on the raised wafer;
and
removing the wafer from the etch chamber, wherein the etching of the dielectric layer takes place within the etch chamber
and wherein the removing of the polymer takes place within the etch chamber.
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