	US 7,597,765 B2
	Post etch wafer surface cleaning with liquid meniscus
Ji Zhu, El Cerrito, Calif. (US); Seokmin Yun, Pleasanton, Calif. (US); Mark Wilcoxson, Oakland, Calif. (US); and John de Larios, Palo Alto, Calif. (US)
Assigned to Lam Research Corporation, Fremont, Calif. (US)
Filed on Jun. 28, 2006, as Appl. No. 11/477,299.
Application 11/477299 is a continuation in part of application No. 10/261839, filed on Sep. 30, 2002, granted, now 7,234,477, filed on Jun. 26, 2007.
Prior Publication US 2007/0240737 A1, Oct. 18, 2007
This patent is subject to a terminal disclaimer.
Int. Cl. B08B 3/08 (2006.01); C23G 1/02 (2006.01)

U.S. Cl. 134—3 [134/28; 134/34; 134/902]

15 Claims

1. A method for cleaning a semiconductor wafer, comprising:

providing a proximity head which includes a plurality of source inlets and a plurality of source outlets, the proximity head including a head surface from which the plurality of source inlets are formed;

moving the proximity head in close proximity to a wafer surface;

applying through the plurality of source inlets to the wafer surface an oxidizer solution, the oxidizer solution forming an oxidizer meniscus between the head surface of the proximity head and the wafer surface, the oxidizer solution further forming an oxidized layer on one or more contaminant species on the wafer surface;

removing the oxidizer solution from the wafer surface through the plurality of source outlets, the removing of the oxidizer solution between performed during the applying of the oxidizer solution so that the oxidizer meniscus remains between the head surface and the wafer surface during the applying and removing of the oxidizer solution;

performing a DI water rinse operation;

applying through, through a plurality of source inlets of a second proximity head, to the wafer surface, a cleaning solution, the second proximity head having head surface; and

removing the cleaning solution from the wafer surface through a plurality of source outlets of the second proximity head, the removing of the cleaning solution being performed during the applying of the cleaning solution to define a cleaning meniscus between the head surface and the wafer surface, and the cleaning solution being defined to substantially remove the oxidized layer along with the one or more contaminant species on the wafer surface with the cleaning meniscus.