| US 7,596,158 B2 | ||
| Method and structure of germanium laser on silicon | ||
| Jifeng Liu, Cambridge, Mass. (US); Dong Pan, Andover, Mass. (US); Lionel C. Kimerling, Concord, Mass. (US); Jurgen Michel, Arlington, Mass. (US); and Sajan Saini, Cambridge, Mass. (US) | ||
| Assigned to Massachusetts Institute of Technology, Cambridge, Mass. (US) | ||
| Filed on Oct. 26, 2006, as Appl. No. 11/553,141. | ||
| Claims priority of provisional application 60/731545, filed on Oct. 28, 2005. | ||
| Prior Publication US 2007/0105251 A1, May 10, 2007 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—43.01 [372/45.01] | 25 Claims |
| 1. A laser structure comprising:
at least one active layer including doped Ge so as to produce light emissions at approximately 1550 nm from the direct band
gap of Ge, said doped Ge having an n+doping concentration of at least 1×10.sup.19 cm−3;
a first confinement structure being positioned on a top region of said at least one active layer, said first confinement structure
comprises materials that provide carrier confinement in said at least one active layer; and
a second confinement structure being positioned on a bottom region of said at least one active layer and comprising p+ Si or n+ Si, said second confinement structure comprises multilayers of two materials with different refractive indexes to form a
diffracted Bragg reflector.
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