an X-row controller for reading an X address from an X-address signal line in the semiconductor memory integrated circuit, holding the X address in a latch circuit, and outputting the X address stored by the latch circuit to a predecoder selected by an bank active signal, wherein the X-row controller includes:

a high-speed-operation control circuit for generating and outputting a latch-circuit control signal, by which:

when the bank active signal is input into the high-speed-operation control circuit, an X-address reading stop period for stopping the latch circuit from receiving the X address is produced after a predetermined amount of delay time has elapsed from the input of the bank active signal, and

in the periods other than the X-address reading stop period, the latch circuit receives and holds the X address;

a low-current-operation control circuit for generating and outputting a latch-circuit control signal, by which:

when no bank active signal is input into the low-current-operation control circuit, the latch circuit stops receiving the X address, and

when the bank active signal is input into the low-current-operation control circuit, the latch circuit receives and holds the X address after a predetermined amount of delay time has elapsed from the input of the bank active signal;

an input switching circuit for selecting whether the bank active signal is output to the high-speed-operation control circuit or the low-current-operation control circuit in accordance with a switching signal input into the X-row controller; and

an output switching circuit for selecting whether the latch-circuit control signal output from the high-speed-operation control circuit or the latch-circuit control signal output from the low-current-operation control circuit is output to the latch circuit in accordance with the switching signal.