| US 7,596,021 B2 | ||
| Memory system including MLC flash memory | ||
| Jin-Hyeok Choi, Yongin-si (Korea, Republic of); and Bong-Ryeol Lee, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jun. 18, 2007, as Appl. No. 11/764,594. | ||
| Claims priority of application No. 10-2007-0013896 (KR), filed on Feb. 09, 2007. | ||
| Prior Publication US 2008/0192539 A1, Aug. 14, 2008 | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.03 [365/185.12; 365/189.05] | 11 Claims |
| 1. A memory system comprising:
a flash memory storing multi-bit data including at least first bit data and second bit data in one memory cell; and
a memory controller controlling the flash memory to program the multi-bit data in the one memory cell at the same time;
wherein the memory system allocates only one logical page into one physical page and wherein one physical page and one logical
page have respectively different page sizes.
|