| US 7,596,017 B2 | ||
| Magnetic random access memory and method of reducing critical current of the same | ||
| Te-Ho Wu, Douliou (Taiwan); Alberto Canizo Cabrera, Douliou (Taiwan); and Lin-Hsiu Ye, Douliou (Taiwan) | ||
| Assigned to National Yunlin University of Science and Technology, Douliou, Yunlin County (Taiwan) | ||
| Filed on Feb. 27, 2007, as Appl. No. 11/679,827. | ||
| Prior Publication US 2008/0205123 A1, Aug. 28, 2008 | ||
| Int. Cl. G11C 11/14 (2006.01) | ||
| U.S. Cl. 365—171 [365/158; 365/173; 977/933; 977/935] | 8 Claims |
| 1. A magnetic random access memory comprising
a substrate made of a vertical anisotropy ferrimagnetic thin film and having a first and a second magnetic subnetworks, wherein
the first and the second magnetic subnetworks form a first magnetic moment;
a free layer made of a vertical anisotropy ferrimagnetic thin film and having a third and a fourth magnetic subnetworks, wherein
the third and the fourth magnetic subnetworks form a second magnetic moment, and the included angle between the first magnetic
moment and the second magnetic moment is less than 180 degrees; and
a spacer layer formed between the substrate and the free layer and made of an insulating material.
|