| US 7,595,696 B2 | ||
| Power amplifier | ||
| Masayuki Sugiura, Kanagawa-ken (Japan); and Yasuhiko Kuriyama, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Dec. 22, 2006, as Appl. No. 11/615,171. | ||
| Claims priority of application No. 2005-371513 (JP), filed on Dec. 26, 2005. | ||
| Prior Publication US 2007/0159246 A1, Jul. 12, 2007 | ||
| Int. Cl. H03F 1/52 (2006.01) | ||
| U.S. Cl. 330—298 [330/207 P] | 19 Claims |
| 1. A power amplifier comprising:
an active device having at least one heterojunction bipolar transistor based on a compound semiconductor;
a diode connected between the base and the emitter of the bipolar transistor in reverse direction with respect to the base-emitter
diode;
a resistor connected in series between one electrode of the diode and the base of the bipolar transistor; and
a bias circuit connected between the diode and the resistor;
wherein the bipolar transistor comprises a plurality of transistors, and each transistor is connected to the bias circuit
via a resistor connected to the base of the transistor.
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