| US 7,595,556 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Jin Ah Kang, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Dongbu HiTek Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Dec. 06, 2006, as Appl. No. 11/567,681. | ||
| Claims priority of application No. 10-2005-0132728 (KR), filed on Dec. 28, 2005. | ||
| Prior Publication US 2007/0145597 A1, Jun. 28, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 257—760 [257/761; 257/762; 257/764; 257/774; 257/E21.576; 257/E21.585; 257/E21.591; 257/E23.145; 438/612; 438/614; 438/618; 438/637; 438/672] | 12 Claims |
| 1. A device comprising:
a semiconductor substrate formed with a metal interconnection;
a first interlayer dielectric layer formed over the metal interconnection and having a first contact plug;
a second interlayer dielectric layer formed over the first interlayer dielectric layer and having a second contact plug; and
a third interlayer dielectric layer formed over the second interlayer dielectric layer and having a third contact plug,
wherein the first, second, and third contact plugs are configured to be in electrical contact with each other,
wherein the first, second, and third interlayer dielectric layers are formed with first, second, and third contact holes configured
to bury the first, second, and third contact plugs therein, respectively, and wherein a width of the second contact hole is
larger than a width of at least one of the first contact hole and the third contact hole.
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