| US 7,595,511 B2 | ||
| Nitride micro light emitting diode with high brightness and method of manufacturing the same | ||
| Sang-Kyu Kang, 208-302 Moklyun Apt. 1052, Hogae-dong, Dongan ku, Anyang City, Geonggi-do 431-080 (Korea, Republic of) | ||
| Assigned to Sang-Kyu Kang, Seoul (Korea, Republic of) | ||
| Appl. No. 10/567,482 PCT Filed Aug. 08, 2003, PCT No. PCT/KR03/01600 § 371(c)(1), (2), (4) Date Feb. 06, 2006, PCT Pub. No. WO2005/015647, PCT Pub. Date Feb. 17, 2005. |
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| Prior Publication US 2006/0208273 A1, Sep. 21, 2006 | ||
| Int. Cl. H01L 33/00 (2006.01); H01L 29/18 (2006.01) | ||
| U.S. Cl. 257—88 [257/79] | 3 Claims |
| 1. A nitride micro LED (Light Emitting Diode) with high brightness, comprising:
a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, and active layer 3 formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer;
a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars,
wherein the gap filling material includes at least one selected from SiO2, Si3N4, or a combination thereof, polyamide, and ZrO2/SiO2 or HfO2/SiO2, and wherein the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP
(Chemical Mechanical Polishing) process;
a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars;
a p-type electrode formed on the p-type transparent electrode;
an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at
the same time; and
wherein a top surface of the p-type GaN layer of the luminous pillars has convex surfaces formed through the CMP process.
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