| US 7,595,462 B2 | ||
| Plasma processing method and plasma processing apparatus | ||
| Yusuke Uno, Tokyo (Japan); Norikatsu Nakamura, Tokyo (Japan); and Hiroki Sakata, Tokyo (Japan) | ||
| Assigned to Dai Nippon Printing Co., Ltd., Tokyo (Japan) | ||
| Filed on Mar. 01, 2007, as Appl. No. 11/680,683. | ||
| Claims priority of application No. 2006-055977 (JP), filed on Mar. 02, 2006. | ||
| Prior Publication US 2007/0210036 A1, Sep. 13, 2007 | ||
| Int. Cl. B23K 10/00 (2006.01) | ||
| U.S. Cl. 219—121.36 [219/121.43; 219/121.52; 219/121.59; 118/723 I; 156/345.47] | 11 Claims |
| 1. A plasma processing method comprising the steps of:
providing a first electrode, and a second electrode disposed relatively movable and parallel to the first electrode;
disposing an object on the first electrode, and between the first and second electrodes;
disposing a solid dielectric material on the first electrode, the solid dielectric material being in contact with at least
a first side and an opposite second side of the object;
introducing a process gas between the first and second electrodes;
applying voltage to both the first and second electrodes; and
processing the object by plasma discharge generated between the first and second electrodes while moving the second electrode
in a direction substantially parallel to the first electrode and the object.
|