| US 7,595,269 B2 | ||
| Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer | ||
| Christof Streck, Coswig (Germany); Volker Kahlert, Dresden (Germany); and Alexander Hanke, Radebeul (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Aug. 25, 2006, as Appl. No. 11/467,216. | ||
| Claims priority of application No. 10 2005 057 075 (DE), filed on Nov. 30, 2005. | ||
| Prior Publication US 2007/0123043 A1, May 31, 2007 | ||
| Int. Cl. H01L 21/4763 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—687 [438/622; 438/637; 438/642; 438/643; 438/653; 257/E21.476; 257/E21.576; 257/E21.582] | 14 Claims |
| 1. A method, comprising:
forming a copper-containing metal region in a first dielectric layer of a metallization layer of a semiconductor device, said
copper-containing metal region having an exposed oxidized surface; and
exposing said exposed oxidized surface to a gaseous ambient comprising at least temporarily a tin hydride gas (SnH4) and comprising at least temporarily a nickel and carbon monoxide containing gas for converting said oxidized surface into
a tin and nickel-containing copper alloy.
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