| US 7,595,208 B2 | ||
| Method of laser annealing using two wavelengths of radiation | ||
| Dean Jennings, Beverly, Mass. (US); Haifan Liang, Draper, Utah (US); Mark Yam, Monte Sereno, Calif. (US); Vijay Parihar, Fremont, Calif. (US); Abhilash Mayur, Salinas, Calif. (US); Aaron Hunter, Santa Cruz, Calif. (US); Bruce Adams, Portland, Oreg. (US); and Joseph Michael Ranish, San Jose, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Aug. 10, 2007, as Appl. No. 11/837,055. | ||
| Application 11/837055 is a division of application No. 11/105270, filed on Apr. 13, 2005, granted, now 7,279,721. | ||
| Prior Publication US 2007/0293058 A1, Dec. 20, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—31 [257/E21.134; 257/E21.347; 257/E21.333; 257/E21.475] | 20 Claims |
| 1. A method of thermally treating a substrate comprising a semiconductor having a bandgap energy, comprising the steps of:
directing the output of a first source of electromagnetic radiation having a first photon energy greater than said bandgap
energy onto said substrate as an elongate first beam having a first dimension along a first axis substantially smaller than
a second dimension along a perpendicular second axis;
directing the output of a second source of electromagnetic radiation having a second photon energy less than said bandgap
energy onto said substrate as a second beam which is surrounded by the first beam; and
scanning said first and second beams relative to the substrate in substantial synchronism along said first axis.
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