| US 7,595,207 B2 | ||
| Method of exposing layer with light and method of manufacturing thin film transistor substrate for liquid crystal display device using the same | ||
| Soon-Il Ahn, Busan (Korea, Republic of); Byoung-Sun Na, Gyeonggi-do (Korea, Republic of); Jeong-Young Lee, Yongin-si (Korea, Republic of); and You-Lee Song, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics, Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Apr. 01, 2004, as Appl. No. 10/815,287. | ||
| Claims priority of application No. 10-2003-0042850 (KR), filed on Jun. 27, 2003. | ||
| Prior Publication US 2004/0266039 A1, Dec. 30, 2004 | ||
| Int. Cl. H01L 31/12 (2006.01); G09G 3/36 (2006.01) | ||
| U.S. Cl. 438—29 [257/59; 345/92; 378/35] | 30 Claims |

| 1. A method for exposing a layer with a light comprising:
disposing a mask including a pattern shape of a pixel electrode over the layer formed on a substrate, wherein the substrate
includes a data line; and
scanning the mask with the light, such that a direction of the scanning is substantially perpendicular to a longitudinal direction
of the data line, wherein the data line was previously formed by a previous scanning in perpendicular to the longitudinal
direction.
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