US 7,593,193 B2
Magnetoresistive element and magnetic memory device
Koichiro Inomata, Yokohama (Japan); Kentaro Nakajima, Yokohama (Japan); Yoshiaki Saito, Kawasaki (Japan); Masayuki Sagoi, Yokohama (Japan); and Tatsuya Kishi, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki-shi (Japan)
Filed on Aug. 30, 2007, as Appl. No. 11/847,496.
Application 11/847496 is a division of application No. 11/367483, filed on Mar. 06, 2006, granted, now 7,345,852.
Application 11/367483 is a division of application No. 11/110869, filed on Apr. 21, 2005, granted, now 7,038,894.
Application 11/110869 is a division of application No. 10/797136, filed on Mar. 11, 2004, granted, now 6,987,653.
Application 10/797136 is a division of application No. 10/443830, filed on May 23, 2003, granted, now 6,751,074.
Application 10/443830 is a division of application No. 09/662117, filed on Sep. 14, 2000, granted, now 6,611,405.
Claims priority of application No. 11-262327 (JP), filed on Sep. 16, 1999; application No. 11-263741 (JP), filed on Sep. 17, 1999; application No. 2000-265663 (JP), filed on Sep. 01, 2000; and application No. 2000-265664 (JP), filed on Sep. 01, 2000.
Prior Publication US 2007/0297101 A1, Dec. 27, 2007
This patent is subject to a terminal disclaimer.
Int. Cl. G11B 5/39 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01)
U.S. Cl. 360—314  [365/158; 365/171; 365/173] 1 Claim
OG exemplary drawing
 
1. A method for writing information to a magnetic memory device comprising a first magnetization pinned layer whose magnetization direction is pinned, a first dielectric layer, a magnetic recording layer whose magnetization direction is reversible, a second dielectric layer, and a second magnetization pinned layer whose magnetization direction is pinned, the method comprising:
supplying a spin current through the first or second magnetization pinned layer to the magnetic recording layer; and
applying a current magnetic field to the magnetic recording layer by allowing a current to flow in a writing wire.