| US 7,592,671 B2 | ||
| Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer | ||
| Thomas N. Adam, Poughkeepsie, N.Y. (US); Stephen W. Bedell, Wappingers Falls, N.Y. (US); Joel P. de Souza, Putnam Valley, N.Y. (US); Keith E. Fogel, Mohegan Lake, N.Y. (US); Alexander Reznicek, Mount Kisco, N.Y. (US); Devendra K. Sadana, Pleasantville, N.Y. (US); and Ghavam Shahidi, Pound Ridge, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jan. 06, 2007, as Appl. No. 11/620,663. | ||
| Application 11/620663 is a division of application No. 10/883887, filed on Jul. 02, 2004, granted, now 7,172,930. | ||
| Prior Publication US 2007/0111463 A1, May 17, 2007 | ||
| Int. Cl. H01L 29/94 (2006.01) | ||
| U.S. Cl. 257—347 [257/348; 257/349; 257/350; 257/351; 257/352; 257/353; 257/354] | 1 Claim |
| 1. A semiconductor structure comprising:
a doped Si-containing crystalline semiconductor substrate;
a relaxed SiGe alloy layer on the substrate, said relaxed SiGe alloy layer including a Ge content up to 99 atomic percent,
a measured degree of relaxation of about 10% or greater, a surface region that is metastable and has a defect density of about
1E5 defects/cm3 or greater;
a high-quality buried oxide layer on the relaxed SiGe alloy layer, said high-quality buried oxide having a leakage current
of about 1 microAmp or less and a breakdown field of about 2 Megavolts or greater;
a strained Si-containing semiconductor layer having a dopant concentration of about 1E15 atoms/cm3 or greater on the high-quality buried oxide layer, wherein the relaxed SiGe alloy layer and the strained Si-containing semiconductor
layer have an identical crystallographic orientation selected from (100), (110) or (111)and both said strained Si-containing
semiconductor layer and said high-quality buried oxide layer are patterned; and
at least one complementary metal oxide semiconductor device located on a surface of said strained Si-containing semiconductor
layer.
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