| US 7,592,660 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Kouichi Nagai, Kawasaki (Japan); and Wensheng Wang, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on Jun. 02, 2008, as Appl. No. 12/131,288. | ||
| Application 12/131288 is a continuation of application No. PCT/JP2005/022204, filed on Dec. 02, 2005. | ||
| Prior Publication US 2008/0237795 A1, Oct. 02, 2008 | ||
| Int. Cl. H01L 29/00 (2006.01); H01L 21/20 (2006.01) | ||
| U.S. Cl. 257—306 [257/532; 257/760; 257/E21.008; 257/E29.343; 438/393; 438/624] | 20 Claims |
| 1. A semiconductor device comprising:
a semiconductor substrate;
a base insulating film formed over the semiconductor substrate;
a capacitor formed over the base insulating film by sequentially forming a lower electrode, a capacitor dielectric film formed
of a ferroelectric material, and an upper electrode;
an interlayer insulating film covering the capacitor;
a first wiring formed over the interlayer insulating film;
a single-layer first insulating film which covers the interlayer insulating film and the first wiring and has a first film
thickness over the first wiring;
a first capacitor protective insulating film formed over the first insulating film;
a first cover insulating film which is formed over the first capacitor protective insulating film and has a second film thickness
over the first wiring, the second film thickness being thicker than the first film thickness;
a first hole formed in the first cover insulating film, the first capacitor protective insulating film, and the first insulating
film, over the first wiring;
a first conductive plug which is formed in the first hole and is electrically connected to the first wiring; and
a second wiring which is formed over the first cover insulating film and is electrically connected to the first conductive
plug.
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