| US 7,592,657 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Wensheng Wang, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on Oct. 30, 2006, as Appl. No. 11/554,354. | ||
| Claims priority of application No. 2006-182300 (JP), filed on Jun. 30, 2006. | ||
| Prior Publication US 2008/0001254 A1, Jan. 03, 2008 | ||
| Int. Cl. H01L 27/108 (2006.01) | ||
| U.S. Cl. 257—295 [257/296; 257/303; 257/306; 257/E27.104; 257/E21.664; 438/244; 438/3; 438/396; 365/15] | 10 Claims |
| 1. A semiconductor device comprising:
a first interlayer insulating film formed over a semiconductor substrate;
a lower electrode formed over the first interlayer insulating film;
a capacitor dielectric film formed over the lower electrode and made of ferroelectric material;
an upper electrode including a first conductive metal oxide film and a second conductive metal oxide film which are sequentially
formed over the capacitor dielectric film to form a capacitor together with the capacitor dielectric film and the lower electrode;
a conductive cover film formed over the upper electrode and made of a platinum-group element except for iridium; and
an alumina film formed over the conductive cover film and over a side surface of the capacitor;
wherein a relation y2/y1>x2/x1 holds for compositions AOx1 and BOy1 (A and B represent metallic elements), where AOx1 and BOy1 being stoicheiometric compositions of first and second metal oxide constituting the first and second conductive metal oxide
film respectively, and for AOx2 and BOy2, where AOx2 and BOy2 being actual compositions of the first and second metal oxides respectively.
|