| US 7,592,654 B2 | ||
| Reduced crosstalk CMOS image sensors | ||
| Sandeep R. Bahl, Loveland, Colo. (US); Fredrick P. LaMaster, Loveland, Colo. (US); and David W. Bigelow, Loveland, Colo. (US) | ||
| Assigned to Aptina Imaging Corporation, Grand Cayman (Cayman Islands) | ||
| Filed on Nov. 15, 2007, as Appl. No. 11/940,569. | ||
| Application 11/940569 is a continuation of application No. 11/197004, filed on Aug. 04, 2005, granted, now 7,307,327. | ||
| Prior Publication US 2008/0079045 A1, Apr. 03, 2008 | ||
| Int. Cl. H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 31/0232 (2006.01); H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01); H01L 29/417 (2006.01); H01L 29/732 (2006.01); H01L 27/148 (2006.01) | ||
| U.S. Cl. 257—291 [257/80; 257/81; 257/82; 257/113; 257/114; 257/115; 257/116; 257/117; 257/118; 257/184; 257/185; 257/186; 257/187; 257/188; 257/189; 257/222; 257/225; 257/233; 257/243; 257/257; 257/258; 257/290; 257/292; 257/293; 257/431; 257/432; 257/435; 257/446; 257/E27.128; 257/E27.129; 257/E27.133; 257/E27.134; 257/E27.135; 257/E27.136] | 16 Claims |
| 1. A CMOS image sensor, comprising:
a substrate;
a single epitaxial layer above the substrate;
a plurality of pixels extending into the epitaxial layer for receiving light;
a horizontal barrier layer between the substrate and the epitaxial layer for preventing carriers generated in the substrate
from moving to the epitaxial layer; and
a plurality of lateral barrier layers between adjacent ones of the plurality of pixels for preventing lateral diffusion of
electrons in the epitaxial layer, wherein the plurality of lateral barrier layers each comprise a deep P-well between adjacent
pixels extending into the epitaxial layer, and
the deep P-well is formed of P-dopant of a single conductivity type in the single epitaxial layer.
|