| US 7,592,642 B1 | ||
| Thyristor-based semiconductor device with indium-carbon implant and method of fabrication | ||
| Srinivasa R. Banna, San Jose, Calif. (US); and James D. Plummer, Portola Valley, Calif. (US) | ||
| Assigned to T-RAM Semiconductor, Inc., Milpitas, Calif. (US) | ||
| Filed on Apr. 04, 2006, as Appl. No. 11/398,398. | ||
| Application 11/398398 is a continuation in part of application No. 10/670881, filed on Sep. 25, 2003, granted, now 7,075,122. | ||
| Application 10/670881 is a continuation in part of application No. 10/958820, filed on Oct. 04, 2004, granted, now 7,195,959. | ||
| Int. Cl. H01L 29/72 (2006.01) | ||
| U.S. Cl. 257—107 [257/119; 257/131; 257/148; 257/156; 257/167; 257/297] | 17 Claims |
| 1. A semiconductor device, comprising:
a thyristor formed in semiconductor material, the thyristor comprising at least one base region having normal acceptor-type
dopant; and
complexes defined at least in part by atomic pairing of a high ionization energy acceptor and an activation species in a portion
of the semiconductor material including at least a portion of the base region, wherein the high ionization energy acceptor
is different from the normal acceptor-type dopant and of ionization energy greater than that of the normal acceptor-type dopant.
|