| US 7,592,641 B2 | ||
| Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device | ||
| Shinji Saito, Yokohama (Japan); Shinya Nunoue, Ichikawa (Japan); and Toshiyuki Oka, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Appl. No. 10/574,850 PCT Filed Feb. 21, 2006, PCT No. PCT/JP2006/003523 § 371(c)(1), (2), (4) Date Apr. 06, 2006, PCT Pub. No. WO2006/134689, PCT Pub. Date Dec. 21, 2006. |
||
| Claims priority of application No. 2005-172585 (JP), filed on Jun. 13, 2005. | ||
| Prior Publication US 2008/0246049 A1, Oct. 09, 2008 | ||
| Int. Cl. H01L 29/24 (2006.01) | ||
| U.S. Cl. 257—103 [257/189; 257/744; 257/745; 257/E21.172; 257/E29.143; 257/E29.144] | 6 Claims |
| 1. A semiconductor device, comprising:
a p-type nitride semiconductor layer; and
a p-side electrode including a palladium oxide film connected to a surface of the p-type nitride semiconductor layer, the
palladium oxide film includes a platinum sulfide structure type palladium oxide crystal;
wherein a percentage content of the platinum sulfide structure type palladium oxide crystal included in the palladium oxide
film is not less than about 50%.
|