| US 7,592,636 B2 | ||
| Radiation-emitting semiconductor component and method for the production thereof | ||
| Johannes Baur, Laaber (Germany); Dominik Eisert, Regensburg (Germany); Michael Fehrer, Bad Abbach (Germany); Berthold Hahn, Hemau (Germany); and Volker Harle, Laaber (Germany) | ||
| Assigned to Osram Opto Semiconductors GmbH, Regensburg (Germany) | ||
| Appl. No. 10/529,625 PCT Filed Sep. 23, 2003, PCT No. PCT/DE03/03157 § 371(c)(1), (2), (4) Date Nov. 18, 2005, PCT Pub. No. WO2004/032248, PCT Pub. Date Apr. 15, 2004. |
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| Claims priority of application No. 102 45 634 (DE), filed on Sep. 30, 2002; and application No. 102 53 911 (DE), filed on Nov. 19, 2002. | ||
| Prior Publication US 2006/0124945 A1, Jun. 15, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 23/495 (2006.01) | ||
| U.S. Cl. 257—98 [257/676; 257/E25.032; 257/E21.001; 438/25; 438/27; 438/113; 438/462] | 27 Claims |
| 1. A radiation emitting semiconductor component comprising:
a radiation-transmissive substrate with inclined side areas and having a refractive index (n1),
a radiation generating layer arranged on an underside of said substrate and having a refractive index (n2),
wherein the refractive index (n1) of the substrate is greater than the refractive index (n2) of the radiation generating layer, and the difference between the refractive indices of the substrate and the radiation
generating layer results in an unilluminated substrate region into which no photons are coupled directly from the radiation
generating layer;
wherein the substrate has essentially perpendicular side areas in the unilluminated region; and
wherein the inclined side areas adjoin a top side of the substrate which is remote from the radiation generating layer and
parallel to the underside of the substrate.
|