| US 7,592,629 B2 | ||
| Gallium nitride thin film on sapphire substrate having reduced bending deformation | ||
| Chang Ho Lee, Seoul (Korea, Republic of); and Sun Hwan Kong, Hwaseong-si (Korea, Republic of) | ||
| Assigned to Samsung Corning Co., Ltd., Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Oct. 06, 2006, as Appl. No. 11/544,006. | ||
| Claims priority of application No. 10-2005-0094184 (KR), filed on Oct. 07, 2005. | ||
| Prior Publication US 2007/0085163 A1, Apr. 19, 2007 | ||
| Int. Cl. H01L 31/12 (2006.01); H01L 31/256 (2006.01) | ||
| U.S. Cl. 257—78 [257/631; 257/E33.001; 257/E33.034] | 4 Claims |
| 1. A gallium nitride thin film on sapphire substrate comprising:
an etching trench structure formed on a sapphire substrate,
wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies the following
Equation 1 and corresponds to or is located above a function graph drawn when Y0 is 6.23±1.15, A is 70.04±1.92, and T is 1.59±0.12:
Y=Y0+A·e−(X−1)/T [Equation 1]
where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y.sub.0, A, and T are positive numbers.
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