| US 7,592,610 B2 | ||
| Mirror for use in a lithographic apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby | ||
| Levinus Pieter Bakker, Helmond (Netherlands); and Frank Jeroen Pieter Schuurmans, Valkenswaard (Netherlands) | ||
| Assigned to ASML Netherlands B.V., Veldhoven (Netherlands) | ||
| Filed on Oct. 20, 2004, as Appl. No. 10/968,471. | ||
| Claims priority of application No. 03078316 (EP), filed on Oct. 20, 2003. | ||
| Prior Publication US 2005/0111080 A1, May 26, 2005 | ||
| Int. Cl. G21K 1/06 (2006.01); G02B 1/10 (2006.01); G03F 7/20 (2006.01) | ||
| U.S. Cl. 250—492.2 [250/504 R; 438/153] | 30 Claims |
| 1. A mirror for use in a lithographic apparatus including a radiation source to generate radiation of a desired wavelength and that, in operation, generates a stream of undesired Sn particles to form a Sn deposition on the mirror, the mirror being at least partly covered with a top layer of a predetermined metal to reduce the formation of the Sn deposition on the mirror by the stream of undesired Sn particles, generated by the radiation source in operation, the predetermined metal being selected such that it interdiffuses in a predetermined temperature range with the Sn deposition, when the lithographic apparatus is in operation, wherein the top layer has a thickness between 10 nm and 10 μm. |