| US 7,592,264 B2 | ||
| Process for removing material from substrates | ||
| Kurt Karl Christenson, Minnetonka, Minn. (US); Ronald J. Hanestad, Glennwood City, Wis. (US); Patricia Ann Ruether, Elk River, Minn. (US); and Thomas J. Wagener, Shorewood, Minn. (US) | ||
| Assigned to FSI International, Inc., Chaska, Minn. (US) | ||
| Filed on Nov. 22, 2006, as Appl. No. 11/603,634. | ||
| Claims priority of provisional application 60/739727, filed on Nov. 23, 2005. | ||
| Prior Publication US 2007/0161248 A1, Jul. 12, 2007 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—735 [216/83; 252/79.1] | 43 Claims |
| 1. A method of removing material from a semiconductor substrate, comprising
a) placing a semiconductor substrate having material on a surface thereof in a treatment chamber;
b) dispensing a liquid sulfuric acid composition from a first supply line comprising sulfuric acid and/or its desiccating
species and precursors onto the substrate surface in an amount effective to substantially uniformly coat the substrate surface;
c) exposing the liquid sulfuric acid composition on the substrate surface to water vapor which is dispensed from a second
supply line and in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature
of the liquid sulfuric acid composition prior to exposure to the water vapor; wherein the liquid sulfuric acid composition
at the time of exposure to water vapor has a water/sulfuric acid molar ratio of no greater than about 5:1; and
d) removing material from the substrate.
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