| US 7,592,256 B2 | ||
| Method of forming tungsten film | ||
| Kazuya Okubo, Tokyo (Japan); Mitsuhiro Tachibana, Yamanashi (Japan); Cheng Fang, Yamanashi (Japan); Kohichi Sato, Yamanashi (Japan); and Hotaka Ishizuka, Yamanashi (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Appl. No. 10/486,794 PCT Filed Aug. 07, 2002, PCT No. PCT/JP02/08086 § 371(c)(1), (2), (4) Date Jul. 23, 2004, PCT Pub. No. WO03/016588, PCT Pub. Date Feb. 27, 2003. |
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| Claims priority of application No. 2001-246089 (JP), filed on Aug. 14, 2001; and application No. 2001-317175 (JP), filed on Oct. 15, 2001. | ||
| Prior Publication US 2005/0032364 A1, Feb. 10, 2005 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—685 [438/680; 257/E21.159; 257/E21.2] | 32 Claims |
| 1. A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized,
the method comprising:
forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas to the vessel
and a tungsten gas supplying process for supplying a tungsten-containing gas to the vessel with an intervening purge process
therebetween for supplying an inert gas to the vessel while exhausting the vessel,
wherein the tungsten film is formed by alternately repeating the reduction gas supplying process for supplying the reduction
gas to the vessel and the tungsten gas supplying process for supplying the tungsten-containing gas to the vessel while controlling
the total pressure of the gases to be constant in the vessel throughout the step of forming the tungsten film, and
wherein a reduction gas-supplying period of an initial reduction gas supplying process among the repeated reduction gas supplying
processes for supplying a reduction gas to the vessel is set to be longer than that of the remaining reduction gas supplying
processes for supplying a reduction gas to the vessel.
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