| US 7,592,239 B2 | ||
| Flexible single-crystal film and method of manufacturing the same | ||
| Jong-Wan Park, Namyangju (Korea, Republic of); and Jea-Gun Park, Sungnam (Korea, Republic of) | ||
| Assigned to Industry University Cooperation Foundation-Hanyang University, Seoul (Korea, Republic of) | ||
| Filed on Apr. 28, 2004, as Appl. No. 10/833,050. | ||
| Claims priority of application No. 10-2003-0027825 (KR), filed on Apr. 30, 2003; and application No. 10-2003-0032841 (KR), filed on May 23, 2003. | ||
| Prior Publication US 2004/0217423 A1, Nov. 04, 2004 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—479 [438/406; 438/455; 438/458; 438/459; 438/517; 257/347; 257/E21.088; 257/E21.122; 257/E21.32; 257/E27.112] | 14 Claims |
| 1. A method for manufacturing a flexible film, the method comprising:
providing a SOI wafer comprising a base wafer, one or more insulator layers on the base wafer, and a single-crystal layer
on the one or more insulator layers;
holding the SOI wafer with a jig to expose a first surface of the base wafer of the SOI wafer; and
removing the base wafer of the SOI wafer by etching the exposed first surface of the base wafer while holding the SOI wafer
with the jig to form the flexible film,
wherein the flexible film is provided with a flexibility capable of bending.
|