| US 7,592,222 B2 | ||
| Method of fabricating flash memory device | ||
| Eun Shil Park, Namyangju-si (Korea, Republic of); Kwon Hong, Seongnam-si (Korea, Republic of); Jae Hong Kim, Seongnam-si (Korea, Republic of); and Jae Hyoung Koo, Seoul (Korea, Republic of) | ||
| Assigned to Hynix Semiconductor Inc., Icheon-Si (Korea, Republic of) | ||
| Filed on Jun. 26, 2008, as Appl. No. 12/147,178. | ||
| Claims priority of application No. 10-2007-0119658 (KR), filed on Nov. 22, 2007. | ||
| Prior Publication US 2009/0163015 A1, Jun. 25, 2009 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—257 [438/197; 438/232; 438/259; 438/261; 438/264; 438/788; 438/792; 257/E21.21; 257/E21.68] | 14 Claims |
| 1. A method of fabricating a flash memory device, the method comprising:
providing a semiconductor substrate on which a stacked layer of a tunnel insulating layer and a first conductive layer is
formed;
forming a first oxide layer on the first conductive layer using a plasma oxidization process in a state where a back bias
voltage is applied to a surface of the first conductive layer;
forming a nitride layer on the first oxide layer;
forming a second oxide layer on the nitride layer; and
forming a second conductive layer on the second oxide layer.
|