| US 7,591,409 B2 | ||
| Semiconductor device bonding apparatus and method for bonding semiconductor device using the same | ||
| Hiroyuki Naito, Osaka (Japan); Satoshi Shida, Osaka (Japan); Yasuharu Ueno, Osaka (Japan); and Makoto Morikawa, Nara (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Appl. No. 11/815,623 PCT Filed Jun. 07, 2006, PCT No. PCT/JP2006/311894 § 371(c)(1), (2), (4) Date Aug. 06, 2007, PCT Pub. No. WO2006/134953, PCT Pub. Date Dec. 21, 2006. |
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| Claims priority of application No. 2005-172560 (JP), filed on Jun. 13, 2005. | ||
| Prior Publication US 2009/0020586 A1, Jan. 22, 2009 | ||
| Int. Cl. B23K 1/06 (2006.01); B23K 37/00 (2006.01) | ||
| U.S. Cl. 228—103 [228/1.1; 228/9; 228/110.1] | 2 Claims |
| 2. A method for bonding a semiconductor device in which operations for bonding a semiconductor device and a substrate are
performed repeatedly, the method comprising:
vibrating the semiconductor device and the substrate relatively by applying an ultrasonic vibration to at least one of the
semiconductor device and the substrate, while pressing the semiconductor device toward the substrate side, in a state where
a bump is provided between the semiconductor device and the substrate;
measuring a time period from a time when starting to apply the ultrasonic vibration, through a period in which a deformation
distance of the bump increases significantly, to a time when a significant deformation of the bump ends; and
controlling an output of an ultrasonic vibration during subsequent bonding, based on the measured time period.
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