| US 7,591,270 B2 | ||
| Process solutions containing surfactants | ||
| Peng Zhang, Quakertown, Pa. (US); Danielle Megan King Curzi, Center Valley, Pa. (US); Eugene Joseph Karwacki, Jr., Orefield, Pa. (US); and Leslie Cox Barber, Cave Creek, Ariz. (US) | ||
| Assigned to Air Products and Chemicals, Inc., Allentown, Pa. (US) | ||
| Filed on Sep. 14, 2006, as Appl. No. 11/520,971. | ||
| Application 11/520971 is a continuation of application No. 10/616662, filed on Jul. 10, 2003, granted, now 7,129,199. | ||
| Application 10/616662 is a continuation in part of application No. 10/218087, filed on Aug. 12, 2002, abandoned. | ||
| Application 10/218087 is a continuation in part of application No. 10/339709, filed on Jan. 09, 2003, abandoned. | ||
| Prior Publication US 2007/0010409 A1, Jan. 11, 2007 | ||
| Int. Cl. B08B 3/08 (2006.01); C11D 7/32 (2006.01) | ||
| U.S. Cl. 134—1.3 [134/902; 510/175; 510/176; 430/331; 430/322] | 15 Claims |
| 1. A method for reducing the number of pattern collapse defects during the manufacture of semiconductor devices, the method
comprising:
providing a substrate comprising a photoresist coating;
exposing the substrate to a radiation source to form a pattern on the photoresist coating;
applying a developer solution to the substrate to form a patterned photoresist coating;
optionally rinsing the substrate with deionized water; and
contacting the substrate with a process solution consisting of at least one solvent and 10 ppm to about 10,000 ppm of at least
one surfactant having the formula (IVa):
 |