| US 7,591,071 B2 | ||
| Manufacturing Method of Semiconductive Element and Ink Jet Head Substrate | ||
| Satoshi Ibe, Yokohama (Japan); Teruo Ozaki, Yokohama (Japan); Ichiro Saito, Yokohama (Japan); Sakai Yokoyama, Kawasaki (Japan); Kenji Ono, Tokyo (Japan); Kazuaki Shibata, Kawasaki (Japan); and Toshiyasu Sakai, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Jan. 27, 2006, as Appl. No. 11/340,467. | ||
| Claims priority of application No. 2005/023716 (JP), filed on Jan. 31, 2005. | ||
| Prior Publication US 2006/0170734 A1, Aug. 03, 2006 | ||
| Int. Cl. B21D 53/76 (2006.01); H01L 21/70 (2006.01) | ||
| U.S. Cl. 29—890.1 [29/846; 29/417; 438/21; 438/460; 438/694; 438/700] | 4 Claims |
| 1. A manufacturing method for manufacturing semiconductor devices by cutting a silicon substrate having the semiconductor
devices formed thereon, said method comprising:
a step of forming a linear recess in the silicon substrate between adjacent semiconductor devices;
an electrode forming step of forming, on an inner surface of the linear recess, an electrode for external electrical connection
of one of the semiconductor devices; and
a step of separating the one semiconductor device from at least one of the adjacent semiconductor devices on the silicon substrate
by cutting the silicon substrate along the linear recess,
wherein said electrode forming step includes a step of forming a metal thin film astride a cutting line at which the silicon
substrate is to be cut, a step of forming a resist layer and patterning the resist layer on the metal thin film to remove
at least one portion of the resist layer, a step of growing metal at the at least one portion, and a step of removing the
patterned resist layer and the metal thin film below the patterned resist layer, wherein the electrode for external electrical
connection is provided by the metal grown in the step of growing the metal.
|