CPC H10N 70/8416 (2023.02) [H10N 70/023 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/8833 (2023.02)] | 10 Claims |
1. A method of manufacturing a resistive random access memory (RRAM), comprising:
forming a lower electrode protruding from a top surface of a dielectric layer;
conformally forming a data storage layer on the lower electrode and the dielectric layer;
forming an oxygen reservoir material layer on the data storage layer;
forming an opening in the oxygen reservoir material layer to expose the data storage layer on the lower electrode;
forming an isolation structure in the opening, wherein the isolation structure divides the oxygen reservoir material layer into a first oxygen reservoir layer and a second oxygen reservoir layer; and
forming an upper electrode on the first and second oxygen reservoir layers, wherein the first and second oxygen reservoir layers share the upper electrode.
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