US 11,758,832 B2
Method of manufacturing resistive random access memory
Bo-Lun Wu, Taichung (TW); and Po-Yen Hsu, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Dec. 7, 2021, as Appl. No. 17/543,732.
Application 17/543,732 is a division of application No. 17/016,305, filed on Sep. 9, 2020, granted, now 11,239,417.
Prior Publication US 2022/0093859 A1, Mar. 24, 2022
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8416 (2023.02) [H10N 70/023 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/8833 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a resistive random access memory (RRAM), comprising:
forming a lower electrode protruding from a top surface of a dielectric layer;
conformally forming a data storage layer on the lower electrode and the dielectric layer;
forming an oxygen reservoir material layer on the data storage layer;
forming an opening in the oxygen reservoir material layer to expose the data storage layer on the lower electrode;
forming an isolation structure in the opening, wherein the isolation structure divides the oxygen reservoir material layer into a first oxygen reservoir layer and a second oxygen reservoir layer; and
forming an upper electrode on the first and second oxygen reservoir layers, wherein the first and second oxygen reservoir layers share the upper electrode.