CPC H10B 51/30 (2023.02) [H01L 23/528 (2013.01); H10B 51/10 (2023.02); H10B 51/20 (2023.02)] | 19 Claims |
1. A semiconductor device comprising:
a first drain/source structure extending in a first direction;
a second drain/source structure extending the first direction and spaced from the first drain/source structure in a second direction perpendicular to the first direction;
a third drain/source structure extending in the first direction and spaced from the second drain/source structure in the second direction;
a first bit line extending in a third direction perpendicular to the first direction and the second direction, the first bit line disposed over the first drain/source structure in the first direction;
a common select line that includes a portion extending in the third direction and disposed over the second drain/source structure in the first direction;
a second bit line extending in the third direction and disposed over the third drain/source structure in the first direction;
a charge storage layer having at least a portion continuously extending along the second direction to couple to a first sidewall of each of the first drain/source structure, the second drain/source structure, and the third drain/source structure; and
a channel that is interposed between the charge storage layer and the at least first sidewall of each of the first drain/source structure, the second drain/source structure, and the third drain/source structure.
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