CPC H10B 43/40 (2023.02) [G11C 5/06 (2013.01); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); G11C 16/06 (2013.01)] | 20 Claims |
1. A three-dimensional (3D) memory device, comprising:
a peripheral device;
a plurality of memory strings;
a layer between the peripheral device and the plurality of memory strings, wherein the layer comprises a conduction region and an isolation region, the conduction region is isolated from both of the peripheral device and the plurality of memory strings; and
a contact extending through the isolation region of the layer.
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