US 11,758,731 B2
Three-dimensional memory device having a shielding layer and method for forming the same
Zongliang Huo, Wuhan (CN); Zhiliang Xia, Wuhan (CN); Li Hong Xiao, Wuhan (CN); and Jun Chen, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on May 17, 2021, as Appl. No. 17/322,751.
Application 17/322,751 is a continuation of application No. 16/140,427, filed on Sep. 24, 2018, granted, now 11,043,506.
Application 16/140,427 is a continuation of application No. PCT/CN2018/093423, filed on Jun. 28, 2018.
Prior Publication US 2021/0272976 A1, Sep. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 5/06 (2006.01); H10B 43/40 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); G11C 16/06 (2006.01)
CPC H10B 43/40 (2023.02) [G11C 5/06 (2013.01); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); G11C 16/06 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a peripheral device;
a plurality of memory strings;
a layer between the peripheral device and the plurality of memory strings, wherein the layer comprises a conduction region and an isolation region, the conduction region is isolated from both of the peripheral device and the plurality of memory strings; and
a contact extending through the isolation region of the layer.